| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce gate leakage current in a semiconductor device made of a group III-V compound semiconductor, and to obtain a good interface between the group III-V compound semiconductor and a gate insulation film. <P>SOLUTION: The semiconductor device comprising the group III-V compound semiconductor includes semiconductor layers 111-114 made of the group III-V compound semiconductor, the gate insulation film 121 formed on the surface of the semiconductor layers 111-114, and a gate electrode 133 formed on the gate insulation film 121. The gate insulation film 121 is made of a Ta (tantalum) oxide, Hf (hafnium) oxide, HfAl (hafnium aluminum) oxide, La (lanthanum) oxide, or Y (yttrium) oxide. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
