发明名称 |
Semiconductor device with STI and its manufacture |
摘要 |
A semiconductor device includes: a silicon substrate with semiconductor elements; an isolation trench formed in the silicon substrate for isolating active regions in the silicon substrate, the isolation trench having a trapezoidal cross sectional shape having a width gradually narrowing with a depth from the surface of the silicon substrate; a first liner insulating film formed on the surface of the trench and made of a silicon oxide film or a silicon oxynitride film having a thickness of 1 to 5 nm; a second liner insulating film formed on the first liner insulating film and made of a silicon nitride film having a thickness of 2 to 8 nm; and an isolation region burying the trench defined by the second liner insulating film.
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申请公布号 |
US2006202301(A1) |
申请公布日期 |
2006.09.14 |
申请号 |
US20060433671 |
申请日期 |
2006.05.15 |
申请人 |
FUJITSU LIMITED |
发明人 |
OHTA HIROYUKI;IRIYAMA YASUNORI |
分类号 |
H01L21/76;H01L29/00;H01L21/762;H01L21/8234;H01L27/08 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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