发明名称 |
Solid-state imaging device |
摘要 |
A MOS solid-state imaging device is provided in which withstand voltage and 1/f noise of a MOS transistor are improved. In the MOS solid-state imaging device whose unit pixel has at least a photoelectric converting portion and a plurality of field effect transistors, the thickness of gate insulating film in a part of the field effect transistors is different from the thickness of gate insulating film in the other field effect transistors among the plurality of the field effect transistors.
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申请公布号 |
US2006202242(A1) |
申请公布日期 |
2006.09.14 |
申请号 |
US20060366296 |
申请日期 |
2006.03.02 |
申请人 |
SONY CORPORATION |
发明人 |
TAKAGI NORIKO;MORI HIROYUKI |
分类号 |
H01L31/113;H01L27/146;H04N5/335;H04N5/357;H04N5/369;H04N5/374;H04N5/3745;H04N5/376 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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