发明名称 Method for manufacturing a semiconductor device using a sidewall spacer etchback
摘要 The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit. The method for manufacturing the semiconductor device, among other steps, includes forming a gate structure ( 130 ) over a substrate ( 110 ), the gate structure ( 130 ) having L-shaped sidewall spacers ( 430 ) on opposing sidewalls thereof and placing source/drain implants ( 310 or 510 ) into the substrate ( 110 ) proximate the gate structure ( 130 ). The method for manufacturing the semiconductor device further includes removing at least a portion of a horizontal segment of the L-shaped sidewall spacers ( 430 ).
申请公布号 US2006205169(A1) 申请公布日期 2006.09.14
申请号 US20050074905 申请日期 2005.03.08
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 YOON JONG S.;SIDDIQUI SHIRIN;CHATTERJEE AMITAVA;GOODLIN BRIAN E.;KIRMSE KAREN H.R.
分类号 H01L21/336 主分类号 H01L21/336
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