发明名称 |
Method for forming dual damascene with improved etch profiles |
摘要 |
A method for forming a dual damascene with improved profiles including providing a semiconductor process wafer including a dielectric insulating layer and an overlying hardmask layer; forming an uppermost layer of amorphous carbon substantially conformally over the hardmask layer; forming a trench line opening through at least the thickness of the amorphous carbon layer; forming a dual damascene opening comprising forming the trench line opening overlying a via opening pattern through a thickness of the hardmask layer and partially through a thickness of the dielectric insulating layer; and, filling the dual damascene opening with metal.
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申请公布号 |
US2006205207(A1) |
申请公布日期 |
2006.09.14 |
申请号 |
US20050075777 |
申请日期 |
2005.03.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN CHENG-KU;CHI MIN-HWA |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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