发明名称 Memory address generation circuit for dynamic RAM used in mobile phone, controls select signals for column address strobe and row address strobe addresses, for memory mapping based on system configuration
摘要 <p>A column address strobe (CAS) address selection circuits output CAS address signal using column address signals and select signals, and a row address strobe (RAS) address selection circuit outputs RAS address signal using row address signals and select signals. The CAS and RAS address select signals are controlled to perform memory mapping according to the system configuration.</p>
申请公布号 DE102006007258(A1) 申请公布日期 2006.09.14
申请号 DE20061007258 申请日期 2006.02.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM, MIN-SOO
分类号 G11C8/10 主分类号 G11C8/10
代理机构 代理人
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