| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon wafer with which occurrence of an undefined pit that occurs after heat treatment can be suppressed at the time of heat treatment under an atmosphere of reducing gas or inert gas or mixed gas of them. SOLUTION: V/G is controlled, a silicon ingot is grown, and a one side polishing wafer with a diameter of 300 mm and thickness of 790μm is created so that an annular OSF region is formed at the time of growing a single crystal by a Czochralski method. The created wafer is immersed in ultra-pure water comprising ozone of 20 ppm for 60 seconds. The wafer immersed in hydrofluoric acid solution with concentration of 1% for 30 seconds is placed on a vertical boat, and is supplied into a vertical heat treatment furnace. A temperature is raised to 1,200°C in a hydrogen temperature and high temperature treatment is performed for sixty minutes. COPYRIGHT: (C)2006,JPO&NCIPI
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