发明名称 Through electrode, package base having through electrode, and semiconductor chip having through electrode
摘要 A through electrode extends through a silicon substrate from the upper surface to the lower surface of the substrate to accomplish electrical conduction between the upper and lower surfaces of the substrate. The through electrode includes a plurality of slender through holes formed in a through electrode forming area of the silicon substrate. The slender through holes extend through the silicon substrate from the upper surface to the lower surface of the silicon substrate. The through electrode also includes a plurality of conductive bodies fitted in the slender through holes. The conductive bodies are electrically connected with each other.
申请公布号 US2006202347(A1) 申请公布日期 2006.09.14
申请号 US20060360570 申请日期 2006.02.24
申请人 EGAWA YOSHIMI 发明人 EGAWA YOSHIMI
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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