| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic ferroelectric memory which can be fabricated by a simple process and to provide its fabrication process. SOLUTION: The organic ferroelectric memory 100 comprises a polysilicon layer 40 having a source region 42 and a drain region 44, an organic ferroelectric layer 50 formed on the polysilicon layer 40, and a gate electrode 60 formed on the organic ferroelectric layer 50. COPYRIGHT: (C)2006,JPO&NCIPI
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