| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a multilayer epitaxial silicon single crystal wafer in which there is no slip dislocation, and which can be applied to a wafer of no slid dislocation, high resistivity and a wafer of a diameter of 300 mm or more, and to provide the multilayer epitaxial silicon single crystal wafer. SOLUTION: The method includes the steps of raising the silicon single crystal rod which doped a nitrogen by a Czochralski method at least, after slicing this silicon single crystal rod and processing it into a silicon single crystal wafer, forming a first epitaxial layer in the surface part of this silicon single crystal wafer, and then forming a second epitaxial layer to the surface layer part of the first layer epitaxial layer. COPYRIGHT: (C)2006,JPO&NCIPI
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