发明名称 |
Split gate non-volatile memory devices and methods of forming same |
摘要 |
Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased floating gate coupling ratios, thereby enabling enhanced programming and erasing efficiency and performance.
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申请公布号 |
US2006202255(A1) |
申请公布日期 |
2006.09.14 |
申请号 |
US20060368154 |
申请日期 |
2006.03.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON HEE S.;KANG SUNG-TAEG;KWON HYOK-KI;KIM YONG T.;SEO BOYOUNG;YOON SEUNG B.;HAN JEONG-UK |
分类号 |
H01L29/788;H01L21/8238 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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