发明名称 Multilayer substrate, method for producing a multilayer substrate, and device
摘要 There is provided a multilayer substrate comprising, at least, a single crystal MgO substrate, an iridium (Ir) film heteroepitaxially grown on the MgO substrate, a diamond film vapor-deposited on the Ir film, wherein crystallinity of the Ir film is that a full width at half maximum (FWHM) of a diffracted intensity peak in 2 theta=46.5° or 2theta=47.3° attributed to Ir (200) analyzed by X-ray diffraction method with a wavelength of lambda=1.54 Å is 0.40° or less. Thereby, there is provided a multilayer substrate that is delamination-proof at the respective interfaces between the MgO substrate and the Ir film and between the Ir film and the diamond film, and, particularly, that has a single crystal diamond film of a large area as a continuous film.
申请公布号 US2006203346(A1) 申请公布日期 2006.09.14
申请号 US20060368617 申请日期 2006.03.07
申请人 ATSUHITO SAWABE 发明人 NOGUCHI HITOSHI;SAWABE ATSUHITO
分类号 G02B1/10 主分类号 G02B1/10
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