Semiconductor structure has semiconductor body, which contains first conductivity type at inner zone, within which source zone of first conductivity type and gate electrode zone of second conductivity type are arranged

摘要

Semiconductor structure (10) has an integrated vertical junction field effect transistor (JFET) and a semiconductor body (11), which contains a first conductivity type at the inner zone (16), within which a source zone (22) of the first conductivity type and a gate electrode zone (23) of second conductivity type are arranged. The source zone of the first conductivity type and gate electrode zone of second conductivity type are embedded at the first surface (15) of the semiconductor body into the inner zone. A first dielectric layer (13) is arranged in the vertical direction (X) on a second surface (14) of the semiconductor body in the area outside the inner zone for the electric insulation of the semiconductor body. A carrier wafer (12) is connected with the semiconductor body by the first dielectric layer and has a continuous recess (19,27) within the area of the inner zone, through which the inner zone is in direct contact with the side of the second surface by means of a drain contact electrode (32).