| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for inexpensively providing a source material of high purity Si for a solar cell substrate in a large amount. SOLUTION: The method for producing silicon includes a step of adding an oxidizing agent to fused silicon to oxidize and remove boron in the silicon, wherein an oxidative gas generating from a high temperature oxidizing agent is sealed within a refining furnace or a narrow space over the fused Si so as to decrease the amount of gas discharged outside the system and to suppress the use amount of the oxidizing agent. Since gasification of the oxidizing agent stops when the pressure reaches the saturation vapor pressure at the current temperature, no rapid gasification of the oxidizing agent is caused and oxidation of boron in Si by the oxidative gas stably proceeds. COPYRIGHT: (C)2006,JPO&NCIPI
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