| 摘要 |
In one embodiment of the invention, a bipolar junction transistor (BJT) includes an emitter comprised of a first doped region doped with a first dopant of a first conductivity type. In addition, a salicide block is disposed over a periphery portion of the first doped region, and a salicide is formed on an exposed portion of the first doped region inside the periphery portion. Such a salicide block prevents formation of salicide down to a base region in turn preventing leakage current through the base for increased beta of the BJT.
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