| 摘要 |
An interpoly insulating film is modified in the film quality, while preventing generation of trap sites. A floating gate 101 is provided on a channel-forming region in the vicinity of the surface of a silicon substrate 112, an interpoly insulating film 134 is provided so as to contact with the floating gate 101, and a control gate 103 is provided so as to contact with the interpoly insulating film 134 and so as to be opposed to at least a part of the floating gate 101. A process step of providing the interpoly insulating film 134 further includes a step of forming on the floating gate 101, the interpoly insulating film 134 so as to contact with the floating gate 101, and a step of exposing, subsequently to the formation of the interpoly insulating film 134 , the interpoly insulating film 134 to an atmosphere containing a nitrogen-containing gas and oxygen, to thereby simultaneously proceed nitriding and oxidation of the interpoly insulating film 134.
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