Positive photosensitive resin, process for production thereof, and resist composition containing positive photosensitive resin

摘要

The present invention provides a positive photosensitive resin and a resist composition containing the positive photosensitive resin, both of which are used for fine pattern formation in semiconductor production and are preferably used in a semiconductor lithography of higher-than-before sensitivity. The positive photosensitive resin of the present invention is a positive photosensitive resin having an acid-labile protecting group which is dissociatable by the action of an acid to allow the resin to have higher solubility in an alkaline developing solution, which resin having, in the high-molecular main chain, a structure represented by the following general formula (1): (wherein X₁ and X₂ may be the same or different and are each independently a straight chain or branched chain hydrocarbon group having 1 to 30 carbon atoms, an alicyclic hydrocarbon group, an aromatic hydrocarbon group or a heterocyclic group, and these groups may be substituted with straight chain or branched chain hydrocarbon of 1 to 6 carbon atoms or -O-hydrocarbon; Y₁ and Y₂ may be the same or different and are each independently a hydrogen atom, a straight chain or branched chain hydrocarbon group having 1 to 6 carbon atoms, a sulfur-containing hydrocarbon group, or an aromatic hydrocarbon group which may have a substituent; and two Zs may be the same or different and are each independently an oxygen atom or a sulfur atom).