Method of epitaxial deoposition of an n-doped silicon layer

摘要

The invention relates to a method of manufacturing a semiconductor device ( 10 ) with a semiconductor body ( 1 ) comprising silicon is provided with an n-type doped semiconductor region ( 2 ) comprising silicon by means of an epitaxial deposition process, wherein the epitaxial deposition process of the n-type region is performed by positioning the semiconductor body ( 1 ) in an epitaxial reactor and introducing in the reactor a first gas stream comprising a carrier gas and further gas streams comprising a gaseous compound comprising silicon and a gaseous compound comprising an element from the fifth column of the periodic system of elements, while heating the semiconductor body ( 1 ) to a growth temperature (Tg) and using an inert gas as the carrier gas. According to the invention for the gaseous compound comprising silicon a mixture is chosen of a first gaseous silicon compound which is free of chlorine and a second gaseous silicon compound comprising chlorine. Such a method allows for a very high carrier concentration in the in-situ doped grown region ( 3 ). Nitrogen is the preferred carrier gas.