| 发明名称 |
MULTILAYER WIRING STRUCTURE, SEMICONDUCTOR DEVICE, PATTERN TRANSFER MASK AND METHOD FOR MANUFACTURING MULTILAYER WIRING STRUCTURE |
| 摘要 |
<p>A multilayer wiring structure is provided with a plurality of wirings at a fine pitch, and is applicable to a case wherein a via is connected to at least one wiring. In the multilayer wiring structure, a region facing the via is locally narrowed, in at least the wiring which faces the via, among the wirings adjacent to the wiring to which the via is connected.</p> |
| 申请公布号 |
WO2006095915(A1) |
申请公布日期 |
2006.09.14 |
| 申请号 |
WO2006JP305178 |
申请日期 |
2006.03.09 |
| 申请人 |
NEC CORPORATION;OOTAKE, HIROTO;HAYASHI, YOSHIHIRO |
发明人 |
OOTAKE, HIROTO;HAYASHI, YOSHIHIRO |
| 分类号 |
H01L21/768;H01L21/3205;H01L21/82;H01L23/52 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
