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发明名称
METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE HAVING TIN LOWER ELECTRODE
摘要
申请公布号
KR20060097306(A)
申请公布日期
2006.09.14
申请号
KR20050018426
申请日期
2005.03.05
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, JEONG TAE;MOON, KWANG JIN;LEE, HO KI;KIM, SUNG TAE;CHOI, GIL HEYUN;LEE, SANG WOO;KWON, UI HUI
分类号
H01L27/108
主分类号
H01L27/108
代理机构
代理人
主权项
地址
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