| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate polishing method by a CMP method capable of highly precisely polishing while reducing the number of processes of work and a manufacturing cost. <P>SOLUTION: When a measuring interval of a polishing rate using a blank wafer exceeds a predetermined time (step S102), the transition of the polishing rate is stabilized (step S105) and the transition of polishing parameters of a product wafer based on the polishing rate is stabilized (step S106), predicted values of present polishing parameters are calculated on the basis of histories of the polishing parameters (step S107) without implementing test polishing for calculating the polishing rate using the blank wafer, and test polishing for calculating polishing parameters using a pilot wafer extracted from product wafers. The product wafer is polished using the foregoing predicted values (step S108). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
