| 摘要 |
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10{overscore (11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10{overscore (13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11{overscore (22} gallium nitride (GaN) grown on a {1{overscore (100} sapphire substrate, and (4) {11{overscore (13} gallium nitride (GaN) grown on a {1{overscore (100} sapphire substrate
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