| 摘要 |
Methods of forming metal-insulator-metal structures may include providing a first conductive electrode on a substrate, forming a dielectric layer on the first conductive electrode, and forming a second conductive electrode on the dielectric layer so that the dielectric layer is between the first and second conductive electrodes. In addition, a conductive layer may be formed between the dielectric layer and one of the first and second conductive electrodes wherein the conductive layer includes a conductive material that decomposes into a non-conductive material once a threshold temperature has been exceeded. Related structures are also discussed.
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