| 摘要 |
PROBLEM TO BE SOLVED: To improve the uniformity of a line width of a resist pattern in the face of a substrate by properly setting conditions in a photolithographic process for forming a resist pattern on a wafer. SOLUTION: In the photolithographic process in which existing processing conditions are set, a resist film on a wafer W is exposed using a mask for applying extinction of a predetermined extinction rate to only the 0-order light of a light source to allow the light to pass, and after that, the resist film is heated and developed to reduce the resist film on the wafer W. After that, the reduction amount of the film thickness of the resist film is measured. Then, the measured reduction amount of the film thickness is converted into the line width of the resist pattern under an existing processing condition by a correspondence function between the film thickness reduction amount and the line width. A heating temperature in heating after exposure is set on the basis of the converted line width. COPYRIGHT: (C)2006,JPO&NCIPI |
