| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device of processing plasma that reduce foreign matter on a backside and scarcely transfer the foreign matter from a loading base to a wafer. SOLUTION: A smooth surface annular leak preventing surface 3 is provided at a position corresponding to the circumference of a substrate 1 on a sampling block 2, a plurality of contact retaining sections 20 with the substrate are provided between the position corresponding to the circumference of the substrate and the position corresponding to the center of the substrate, and an electrostatic adsorption means that contacts and engages the annular leak preventing surface and the contact retaining section with the backside of the substrate is provided. The substrate 1 contacts a cooling surface by the surface 3 and the section 20 located inside the surface. However, the backside of the substrate and the cooling surface are not contacted in almost all remaining areas. COPYRIGHT: (C)2006,JPO&NCIPI |
