| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a body layer of a semiconductor device which does not accompany thermal dispersion process, a method of manufacturing the semiconductor device comprising the body layer, and to provide the semiconductor device. SOLUTION: A body layer 100 of the semiconductor device consists of a first region 5 and a second region 8. The forming process of the first region 5 is performed before forming a gate electrode 7, and the forming process of the second region 8 is performed after forming the gate electrode 7. After a first ion implantation process in which the impurity of first conductive type is selectively introduced into an offset layer 3 of second conductive type, the first region 5 of the body layer 100 is formed just below around an end region 7-1 in the formation region of the gate electrode 7, with no thermal dispersion process of impurity. A second ion implantation process is performed after forming the gate electrode 7 in which the impurity of first conductive type is selectively introduced into the offset layer 3 of second conductive type with the gate electrode 7 as a mask. Here, with no thermal dispersion process with impurity, the second region 8 of the body layer 100 self-matched with the end part 7-1 of the gate electrode 7 and the first region 5 is formed. COPYRIGHT: (C)2006,JPO&NCIPI
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