SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve characteristics and reliability in a semiconductor device operating in a high frequency band. SOLUTION: A semiconductor device comprises a single or a plurality of bipolar transistors including a subcollector layer, a collector layer, a base layer, and emitter layer laminated on the front side of a semiconductor substrate as a carrier transit layer; an insulating layer provided under the carrier transit layer; a conductive layer provided under the insulating layer; a via hole as a non-through hole formed so as to reach the conductive layer; a metallic wiring layer formed on the semiconductor substrate to be electrically connected to any terminal of the transistor; and a metallic wiring layer formed on the side wall of the via hole and on the bottom surface thereof. COPYRIGHT: (C)2006,JPO&NCIPI