| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light receiving element capable of receiving light of a wide wavelength range of about 1μm at a high speed with high efficiency, wherein light having a wide wavelength range of about 1μm is currently hoped for a wavelength band that can be used for a high-speed optical interconnection. SOLUTION: Semiconductor layers containing a light absorbing layer 13 which absorbs incident light, are formed on a semiconductor substrate 11 for the formation of the semiconductor light receiving element 1. A window layer 14 is formed on the surface of the light absorbing layer 13 where light is made to impinge, the forbidden band energy of the window layer 14 is 1.4 eV or above, and the window layer 14 is 0.5μm or below in thickness. COPYRIGHT: (C)2006,JPO&NCIPI
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