| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to control an optional width of an active layer and realize a high mesa structure without making the active layer containing aluminum be in contact with air. SOLUTION: The manufacturing process of the optical semiconductor device includes a step S1 where a laminated structural body which is formed on a substrate and is provided with an active layer containing aluminum between a pair of different conductive clad layers is etched up to the vicinity of the active layer outside a crystal growth furnace, a step S2 where the active layer and the paired clad layers are etched in the crystal growth furnace, and a step S3 where an embedded layer is formed. Therefore, even if a high mesa structural body is formed, the structural body can be etched at a width of the active layer suitable for the optical semiconductor device without making the active layer be in contact with air. COPYRIGHT: (C)2006,JPO&NCIPI
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