| 摘要 |
PROBLEM TO BE SOLVED: To provide a gate structure capable of keeping high performance even under micronization, relating to a semiconductor device in which a plurality of MOSFETs are so mounted, in a mixed manner on the same semiconductor substrate as to correspond to two or more kinds of power source voltages. SOLUTION: An MOSFET provided with a gate insulating film 9 of high dielectric material, and an MOSFET provided with a gate insulating film 10 containing no high dielectric material, are provided on a semiconductor substrate 1. The gate electrode of the MOSFET, provided with the gate insulating film of the high dielectric material, is constituted from silicide or metal. The gate electrode of the MOSFET provided with the gate insulating film, containing no high dielectric material, is constituted from polycrystalline or amorphous silicon, or silicon germanium. The low-voltage operation MOSFET and high-voltage operation MOSFET, mounted in mixed manner on a single semiconductor substrate, can be provided with an optimum gate electrode, respectively, for avoiding degradation in element performance under micronization. COPYRIGHT: (C)2006,JPO&NCIPI
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