| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of reducing parasitic capacitance so that a good electric characteristics is provided in a high frequency region. SOLUTION: After HEMT is formed, side walls 11a and 11b are formed on a semiconductor substrate. Then the HEMT is covered to form a sacrifice layer 15. Contact holes 16a and 16b are formed in the sacrifice layer 15 so that upper surfaces of source electrodes 6a and 6b are exposed. Then, by patterning a metal film formed entirely, a metal wiring 9 is formed. A slit 12 is formed in the metal wiring 9, so that the upper surface of the sacrifice layer 15 is partially exposed. After the sacrifice layer 15 is melted, the molten sacrifice layer 15 is discharged outside through the slit 12. As the sacrifice layer 15 is removed, an air layer 10 is formed. COPYRIGHT: (C)2006,JPO&NCIPI
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