Magnetoresistive effect element and magnetic memory

摘要

A TMR element has a free first magnetic layer, a second magnetic layer with a fixed magnetization direction provided above one surface of the first magnetic layer, a nonmagnetic insulating layer provided between the first magnetic layer and the second magnetic layer, a third magnetic layer with a fixed magnetization direction provided above another surface of the first magnetic layer, and a first nonmagnetic conductive layer provided between the first magnetic layer and the third magnetic layer. An electric resistance per cross section of 1 mum² perpendicular to a stack direction, between two ends in the stack direction, is not less than 1 Omega nor more than 100 Omega.