| 发明名称 |
STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR WIRING LEVELS USING ATOMIC LAYER DEPOSITION |
| 摘要 |
A method for forming a conductive wire structure for a semiconductor device includes defining a mandrel on a substrate, forming a conductive wire material on the mandrel by atomic layer deposition, and forming a liner material around the conductive wire material by atomic layer deposition.
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| 申请公布号 |
US2006205226(A1) |
申请公布日期 |
2006.09.14 |
| 申请号 |
US20050906899 |
申请日期 |
2005.03.11 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIHARU;HOLMES STEVEN J.;HORAK DAVID V.;KOBURGER CHARLES W.III |
| 分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
| 代理机构 |
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| 主权项 |
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