| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming method capable of forming an inorganic oxide film which has high adhesion characteristics and film strength, and exhibits an excellent property with ease at a low cost, and to provide a substrate for an electronic device comprising the inorganic oxide film, a reliable electronic device, and electronic equipment. SOLUTION: The film forming method includes a first process in which inorganic oxide particles 81a are deposited on a substrate (base material) 2 to form an aggregate 81 of the inorganic oxide particles 81a in a form of a film, a second process in which a solvent 82a that can melt the inorganic oxide particles 81a is supplied to the aggregate 81 to melt the surface of the inorganic oxide particles 81a to fill a gap between the inorganic oxide particles 81a or coat the surface of inorganic oxide particles 81a using a molten material of the inorganic oxide particles 81a, and a third process in which the aggregate 81 is stabilized by precipitates 82b from the molten material. After the third process, a fourth process is preferred to be included which performs a process to change the precipitates 82b into an oxide 82c. COPYRIGHT: (C)2006,JPO&NCIPI
|
