MEMORY DEVICE THAT UTILIZES METAL NITRIDE AS TRAP SITE, AND METHOD FOR MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To provide a memory device that utilizes a metal nitride as a trap site, and a method for manufacturing the device. SOLUTION: A semiconductor memory device comprises a semiconductor substrate 21 and a gate structure formed on the semiconductor substrate 21 and which comes into contact with a first impurity region 22a and a second impurity region 22b formed on the semiconductor substrate 21, and the gate structure utilizes a metal nitride as a trap site. COPYRIGHT: (C)2006,JPO&NCIPI