| 摘要 |
A transmitted light absorption/recombination layer, a barrier layer, a wavelength selection/absorption layer, and an InP window layer having a p-type region are supported by an n-type substrate and arranged in that order. Light with a wavelength of 1.3 mum reaches the wavelength selection/absorption layer through the InP window layer. Then, the light is absorbed by the wavelength selection/absorption layer and drawn from the device as an electric current signal. Light with a wavelength of 1.55 mum reaches the transmitted light absorption/recombination layer through the barrier layer. Then, the light is absorbed by the transmitted light absorption/recombination layer, generating electrons and holes. These electrons and holes recombine with each other and hence disappear.
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