发明名称 |
LOW-K DIELECTRIC THIN FILMS AND CHEMICAL VAPOR DEPOSITION METHOD OF MAKING SAME |
摘要 |
A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first step, a dense SiOC thin film is CVD deposited from the organosilicon precursor having at least one alkyl group and at least one cleavable organic functional group, having retained therein at least a portion of the alkyl and cleavable organic functional groups. In a second step, the dense SiOC thin film is post annealed to effectively remove the volatile liquid or gaseous by-products, resulting in a porous low-dielectric constant SiOC thin film. The porous, low dielectric constant, SiOC thin films are useful as insulating layers in microelectronic device structures. Preferred porous, low-dielectric SiOC thin films are producted using di(formato)dimethylsilane as the organosilicon precursor. |
申请公布号 |
WO03015129(A3) |
申请公布日期 |
2006.09.14 |
申请号 |
WO2002US25002 |
申请日期 |
2002.08.06 |
申请人 |
ADVANCED TECHNOLOGY MATERIAL, INC. |
发明人 |
LAXMAN, RAVI, K.;XU, CHONGYING;BAUM, THOMAS, H. |
分类号 |
C07F7/04;C07F7/08;C07F7/18;C07F7/21;C23C16/40;C23C16/56;H01L21/31;H01L21/316 |
主分类号 |
C07F7/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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