发明名称 |
NANOMETRIC MOS TRANSISTOR WITH MAXIMIZED RATIO BETWEEN ON-STATE CURRENT AND OFF-STATE CURRENT |
摘要 |
<p>The invention concerns a MOS transistor whereof the gate length is smaller by twice the Broglie wavelength of the current carriers in the material of the channel. The channel region section (3) is reduced in the vicinity of the drain region (8) by at least one dimension at a value (e2) less than half said wavelength.</p> |
申请公布号 |
WO2006095112(A1) |
申请公布日期 |
2006.09.14 |
申请号 |
WO2006FR50200 |
申请日期 |
2006.03.07 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;UNIVERSITE PAUL CEZANNE D'AIX MARSEILLE III;CAVASSILAS, NICOLAS |
发明人 |
CAVASSILAS, NICOLAS |
分类号 |
H01L29/786;H01L29/06 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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