| 摘要 |
<P>PROBLEM TO BE SOLVED: To restrain a piezoelectric thin film from separated out of an upper layer electrode film, in an oscillation type gyro sensor. <P>SOLUTION: This manufacturing method forms an oscillation type gyro sensor element 100 provided with a cantilever-shaped oscillator 110 comprising a piezoelectric oscillation body formed with a driving electrode 106a and detecting electrodes 106b, 106c, on a surface, by a thin film process. Recrystallization heat treatment is carried out at a temperature lower by 50°C or more than a heat treatment temperature when forming the piezoelectric substance thin film, after forming a lower electrode, a piezoelectric layer and an upper layer electrode pattern. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
