| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a field effect transistor which has a low Schottky barrier between source/drain electrodes and a semiconductor layer. SOLUTION: On a substrate 10, a semiconductor carbon nanotube 12 is formed. The source and the drain 13 are formed on the carbon nanotube 12 side. The source and the drain 13 include a metal carbide 15 formed in contact with the side face of the carbon nanotube 12 and a metal electrode 14 formed on the metal carbide. Between the source and the drain on the carbon nanotube, a gate insulation film 16 and a gate electrode 17 are stacked. COPYRIGHT: (C)2006,JPO&NCIPI |
