Electronic device and it's manufacturing method

摘要

A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube ( 10 ) having an outer semiconductive carbon nanotube layer ( 1 ) and an inner metallic carbon nanotube layer ( 2 ) that is partially covered by the outer semiconductive carbon nanotube layer ( 1 ). A metal source electrode ( 3 ) and a metal drain electrode ( 5 ) are brought into contact with both ends of the semiconductive carbon nanotube layer ( 1 ) while a metal gate electrode ( 4 ) is brought into contact with the metallic carbon nanotube layer ( 2 ). The space between the semiconductive carbon nanotube layer ( 1 ) and the metallic carbon nanotube layer ( 2 ) is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer ( 1 ) and the inner metallic carbon nanotube layer ( 2 ) are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube ( 10 ).