INTEGRATED CIRCUIT AND METHOD FOR ITS MANUFACTURE

摘要

An integrated circuit and methods for its manufacture are provided. The integrated circuit (20) comprises a bulk silicon substrate (24) having a first region (64, 66) of (100) crystalline orientation and a second region (66, 64) of (110) crystalline orientation. A layer (62) of silicon on insulator overlies a portion of the bulk silicon substrate. At least one field effect transistor (96, 98) is formed in the layer (62) of silicon on insulator, at least one P-channel field effect transistor (90, 92) is formed in the second region (66, 64) of (110) crystalline orientation, and at least one N-channel field effect transistor (90, 92) is formed in the first region (64, 66) of (100) crystalline orientation.