发明名称 |
Composition for stripping photoresist and method for manufacturing thin transistor array panel using the same |
摘要 |
The present invention provides a photoresist stripper comprising about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent. |
申请公布号 |
US2006204896(A1) |
申请公布日期 |
2006.09.14 |
申请号 |
US20050217400 |
申请日期 |
2005.09.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK HONG-SICK;JEONG JONG-HYUN;YOON SUK-IL;KIM SEONG-BAE;KIM WY-YONG;HUH SOON-BEOM;KIM BYUNG-UK |
分类号 |
C11D9/00;G03C5/00 |
主分类号 |
C11D9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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