| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for pattern data lithography of an electron beam lithographic device capable of optimally correcting proximity effects and irradiation volume within a dry plate for correct lithography. SOLUTION: The method and apparatus for pattern data lithography of the electron beam lithographic device comprises normal lithographic hardware 10 for normal lithography, and a hardware data transfer 20 for correcting the proximity effects. Accumulated energy conversion table memories 27 and 27' are provided by the number of lithographic fields in the proximity effect correcting hardware. The corrected amount of the proximity effect correction by means of the table memories 27 and 27' is applied to a proximity effect correction map in the normal lithographic hardware, and shot time is adjusted for beam lithography. COPYRIGHT: (C)2006,JPO&NCIPI
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