| 摘要 |
PROBLEM TO BE SOLVED: To provide deterioration of evaluation precision of a melting state of a surface of a wafer. SOLUTION: A monitor light emitting device 5 makes monitor light L<SB>M</SB>incident on the wafer W through a window 2 from an external part of a chamber 1. A first light intensity measuring device 8 measures, out of several beams of the monitor light L<SB>M</SB>, intensity of external outgoing light L<SB>M0</SB>reflected on the surface of the wafer W and is emitted to an external part of the chamber 1 through the window 2. A second light intensity measuring device 9 measures intensity of first reflected light L<SB>M1</SB>which is made incident on the window 2 from the external part of the chamber 1 and is reflected on the window 2 among monitor light L<SB>M</SB>. A third light intensity measuring device 10 measures intensity of second reflected light L<SB>M2</SB>which is reflected on the surface of the wafer W, is made incident on the window 2 from an internal part of the chamber 1 and is reflected on the window 2 among the monitor light L<SB>M</SB>. A computer 11 evaluates the melting state of the surface of the wafer W based on measuring results of the first to third light intensity measuring devices 8, 9 and 10. COPYRIGHT: (C)2006,JPO&NCIPI
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