发明名称 SPUTTERING SYSTEM
摘要 PROBLEM TO BE SOLVED: To improve a bottom coverage rate while maintaining a required film deposition rate even in the case of a large substrate. SOLUTION: In a magnet mechanism 4 composing a cathode 2, leakage lines of magnetic force going from one part in the surface of a target 5 and entering the other part in the surface of the target 5 is circularly ranged onto the surface of the target 5, so as to set a plurality of circular magnetic fields. In this way, a plurality of erosion regions 50 made into circular shape upon the stillness of the magnet mechanism 4 are formed without being crossed. Among the erosion regions 50, in the part on which sputter particles are made incident from the deepest part of the erosion at the widest incident angle, the incident angle is made narrow compared with the case of one erosion region. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006241598(A) 申请公布日期 2006.09.14
申请号 JP20060149061 申请日期 2006.05.29
申请人 CANON ANELVA CORP 发明人 KOBAYASHI MASAHIKO;TAKAHASHI NOBUYUKI
分类号 C23C14/35;H01L21/285 主分类号 C23C14/35
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