| 摘要 |
PROBLEM TO BE SOLVED: To supply gas of an appropriate mixing ratio into thin film deposition process chambers of all of thin film production apparatus regardless of differences in gas supply systems, and to obviate the occurrence of pressure dependence in another measurement method, management of consumables, wavelength selectivity, explosiveness, a problem of a need for a large amount of samples, a problem that measurement in real time is not possible, etc. SOLUTION: The gaseous mixture to perform a composition change by which a composition is uniquely defined from viscosity is used and the pressure value of the gaseous mixture is inputted from both measured values of a pressure measuring instrument sensitive to not only to pressure but to a physical properties value and a pressure measuring instrument which is not influenced by the physical properties value and the physical properties value is determined. Based on the database of the physical properties value corresponding to the composition previously acquired from the determined physical properties value, the composition is determined, and the flow rates of a plurality of the gas supply apparatus for supplying the thin film deposition process chambers to deposit thin films on a substrate are respectively independently controlled by the composition. COPYRIGHT: (C)2006,JPO&NCIPI
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