发明名称 Conditioning of a reaction chamber
摘要 A method is provided for forming polymer on an interior surface of a reaction chamber. A polymer-forming gas is introduced into the chamber during the etching of a photoresist layer of a semiconductor wafer within the reaction chamber and the environment is regulated to form the polymer on the interior surface of the chamber. The polymer thus formed reduces the standard deviation of the critical dimensions of the semiconductor wafer. A method for the manufacture of integrated circuits is also provided.
申请公布号 US2006202394(A1) 申请公布日期 2006.09.14
申请号 US20050273820 申请日期 2005.11.14
申请人 POLINSKY WILLIAM A;CRANE BILL;GONZALES JOHN C;OTT STEVEN 发明人 POLINSKY WILLIAM A.;CRANE BILL;GONZALES JOHN C.;OTT STEVEN
分类号 B29C35/08;B44C1/22;H01L21/302;H01L21/311 主分类号 B29C35/08
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