发明名称 Integrated circuit, and method for the production of an integrated circuit
摘要 Embodiments of the invention relate to an integrated circuit comprising an organic semiconductor, particularly an organic field effect transistor (OFET) that is provided with a dielectric layer. The integrated circuit is produced by means of a polymer formulation consisting of a) 100 parts of at least one crosslinkable basic polymer, b) 10 to 20 parts of at least one electrophilic crosslinking component, c) 1 to 10 parts of at least one thermal acid catalyst that generates an activating proton at temperatures ranging from 100 to 150° C., dissolved in d) at least one solvent. Other embodiments of the invention further relate to a method for producing an integrated circuit, which makes it possible to produce integrated circuits comprising dielectric layers, especially for OFET's at low temperatures.
申请公布号 US2006202198(A1) 申请公布日期 2006.09.14
申请号 US20060364847 申请日期 2006.02.28
申请人 HALIK MARCUS;KLAUK HAGEN;SCHMID GUENTER;WALTER ANDREAS;ZSCHIESCHANG UTE 发明人 HALIK MARCUS;KLAUK HAGEN;SCHMID GUENTER;WALTER ANDREAS;ZSCHIESCHANG UTE
分类号 H01L29/08;C08K5/053;C08K5/42;C08L61/14;H01B3/44;H01L51/30 主分类号 H01L29/08
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