Device produced by method for etching a layered substrate

摘要

A device made through a fabrication method is disclosed. In one embodiment, the method includes a dry etch plasma process that utilizes CO₂ to etch a layer. Furthermore, the dry etch plasma process may utilize CO₂ in combination with NH₃, H₂, Ar, N₂, He, or other inert gases during the etching process. In another embodiment, the CO₂ dry etch plasma process etches an anti-reflectant coating layer while enabling greater selectivity and control with regard to underlying layers.